Gate dielectrics improve gallium nitride devices
نویسندگان
چکیده
منابع مشابه
Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices
The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN m...
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ژورنال
عنوان ژورنال: Nature Electronics
سال: 2020
ISSN: 2520-1131
DOI: 10.1038/s41928-020-0371-6